This resulted in a decreased do the job purpose plus the formation of the Schottky Call amongst the BrGO and n-type Si substrate. Resulting from the higher proportion of B-C and B-C3 bonding in the BrGO/Si system than that in the rGO/Si, the diminished Schottky barrier height with the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/